Poly CDU Study of 65nm Process on High NA ArF Scanner
Li Qinggang，SIMC(Beijing)
关于高NA ArF扫描仪65nm工艺Poly CDU研究
- 随着CD尺寸紧缩，Poly CD的控制越来越重要，尤其对于逻辑器件。
- 多种因素影响Poly CD尺寸：掩膜版、扫描光源、聚焦点、投影镜头、激光源、曝光后烘烤、光刻胶等等。
- 采用特殊工艺以更好控制Poly CDU，需要理解每个可能因素的影响。
- 采集晶圆级数据所需时间较长，各种因素容易参杂混淆；根据相关因素采用仿真软件模拟Poly CD变化，快速并节省成本。
Oliver Li, Qinggang_Li; Over 10 years Lithography experience. has ever worked in Motorola Semiconductor Sector for over 6 years , Characterized, Qualified and released mainlan
d CHina's 1st 8" i-line scanner, 1st DUV(248nm) Scanner; then joined SMIC Technology development center, led the lithography process development of 130nm/90nm/65nm logic process. Characterized, qualified and release mainland China's 1st ArF 193nm scanner and 1st high NA 193nm scanner. Evaluated and Qualified 1st group of ArF 193nm resist in mainland China. Now is investigating 45nm ltihograhpy in SMIC LTD. Own couples of patents.
Abstract:
With CD size shrinking, Poly CD control is more and more critical, especially for logic device ; Multiple factors affect poly CD, masks, scanner illuminator, focus, projection lens, laser, track PEB, resist etc. For better control poly CDU for a specific process, it is necessary to know the contribution of each factor’s contribution. The cycle time of collecting wafer level data is long. Use software to simulate the poly CD variation according to the variation of contribution factors could save engineering work and time. In this presentation, we tried ASML’s Litho Cruiser, calibrated an advanced ArF resist model in SMIC. Setup a methodology of 65nm poly CDU prediction with litho Cruiser. Wafer level poly CDU data confirmed the prediction by Litho Cruiser .Use Litho cruiser predicted the major poly CDU contributors and it matched wafer level data well.
演讲资料下载：关于高NA ArF扫描仪65nm工艺Poly CDU研究
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